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| Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) 2.9V @VGE = 15V, I C = 16A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 26 16 52 52 10 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2 (0.07) Max. 1.2 -- 80 -- Units C/W g (oz) Revision 1 C-307 To Order Previous Datasheet Index Next Data Sheet IRGBC30M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.65 -- V/C VGE = 0V, I C = 1.0mA -- 1.9 2.9 IC = 16A V GE = 15V -- 2.7 -- V IC = 26A See Fig. 2, 5 -- 2.2 -- IC = 16A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -12 -- mV/C VCE = VGE, IC = 250A 3.3 6.5 -- S VCE = 100V, I C = 16A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -- 35 53 IC = 16A -- 7.4 11 nC VCC = 400V See Fig. 8 -- 14 21 VGE = 15V -- 31 -- TJ = 25C -- 31 -- ns IC = 16A, V CC = 480V -- 280 420 VGE = 15V, R G = 23 -- 310 470 Energy losses include "tail" -- 0.4 -- -- 1.9 -- mJ See Fig. 9, 10, 11, 14 -- 2.3 3.5 10 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 23, VCPK < 500V -- 31 -- TJ = 150C, -- 30 -- ns IC = 16A, V CC = 480V -- 530 -- VGE = 15V, R G = 23 -- 660 -- Energy losses include "tail" -- 4.4 -- mJ See Fig. 10, 14 -- 7.5 -- nH Measured 5mm from package -- 750 -- VGE = 0V -- 110 -- pF VCC = 30V See Fig. 7 -- 9.3 -- = 1.0MHz C-308 To Order Previous Datasheet Index Next Data Sheet IRGBC30M 30 For both: Triangular wave: Load Current (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 21W 20 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 10 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-309 To Order Previous Datasheet Index Next Data Sheet IRGBC30M 30 25 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 5.0 VGE = 15V 80s PULSE WIDTH I C = 32A 4.0 20 3.0 15 I C = 16A 2.0 10 I C = 8.0A 1.0 5 0 25 50 75 100 125 A 150 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.5 0 0.20 0.10 PD M 0.1 0 .05 0 .0 2 0 .0 1 S IN G L E PU LS E (TH E R MAL RE S PO N SE ) t 1 t 2 N o te s : 1 . D u ty f ac t or D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-310 To Order Previous Datasheet Index Next Data Sheet IRGBC30M 1400 20 1200 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc VCE = 400V I C = 16A 16 C, Capacitance (pF) 1000 Cies 800 12 Coes 600 8 400 4 200 Cres A 1 10 100 0 0 0 10 20 30 A 40 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.60 Total Switching Losses (mJ) 2.55 Total Switching Losses (mJ) VCC VGE TC IC = 480V = 15V = 25C = 16A 100 R G = 23 V GE = 15V V CC = 480V I C = 32A I C = 16A I C = 8.0A 2.50 10 2.45 2.40 1 2.35 2.30 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-311 To Order Previous Datasheet Index Next Data Sheet IRGBC30M 12 10 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TC V CC V GE = 23 = 150C = 480V = 15V 100 VGE = 20V TJ = 125C 8 SAFE OPERATING AREA 6 10 4 2 0 0 10 20 30 40 A 1 1 10 100 A 1000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-312 To Order |
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